PBSS5440D,115 datasheet

Маркировка

PBSS5440D,115
Производитель

NXP Semiconductors
Описание

NXP Semiconductors PBSS5440D,115 Current - Collector (ic) (max): 4A Current - Collector Cutoff (max): 100nA Dc Current Gain (hfe) (min) @ Ic, Vce: 175 @ 2A, 2V Frequency - Transition: 110MHz Lead Free Status / Rohs Status: Lead free / RoHS Compliant Mounting Type: Surface Mount Package / Case: SC-74-6 Power - Max: 1.1W Series: - Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 450mV @ 600mA, 6A Voltage - Collector Emitter Breakdown (max): 40V Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Single Transistor Polarity: PNP Collector- Base Voltage VCBO: 40 V Collector- Emitter Voltage VCEO Max: 40 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 4 A Gain Bandwidth Product fT: 110 MHz DC Collector/Base Gain hfe Min: 200 at 0.5 A at 2 V, 200 at 1 A at 2 V, 175 at 2 A at 2 V, 80 at 4 A at 2 V, 30 at 6 A at 2 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT DC Current Gain hFE Max: 200 at 0.5 A at 2 V Maximum Power Dissipation: 2500 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 3000 Part # Aliases: PBSS5440D T/R Other Names: 934057955115, PBSS5440D T/R
Количество страниц

13 шт.
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161,35 KB